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march 2011 doc id 018550 rev 1 1/13 13 STL100N1VH5 n-channel 12 v, 0.0022 ? , 25 a powerflat? (5x6) stripfet? v power mosfet features r ds(on) * q g industry benchmark extremely low on-resistance r ds(on) very low switching gate charge high avalanche ruggedness low gate drive power losses application switching applications description this device is a 12 v n-channel stripfet?v power mosfet which has been designed to achieve very low on-state resistance providing also one of the best-in-class figure of merit (fom). figure 1. pin-out configuration order code v dss r ds(on) max. i d STL100N1VH5 12 v <0.003 ? 25 a (1) 1. the value is rated according r thj-pcb powerflat? ( 5x6 ) !-6 "ottom6iew $ $ $ $ 3 3 3 ' 4op6iew table 1. device summary order code marking package packaging STL100N1VH5 100n1vh5 powerflat? (5x6) tape and reel www.st.com
contents STL100N1VH5 2/13 doc id 018550 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STL100N1VH5 electrical ratings doc id 018550 rev 1 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 12 v v gs gate-source voltage 8 v i d (1) 1. the value is rated according r thj-c drain current (continuous) at t c = 25 c 100 a i d (1) drain current (continuous) at t c = 100 c 62.5 a i d (2) 2. the value is rated according r thj-pcb drain current (continuous) at t c = 25 c 25 a i d (2) drain current (continuous) at t c =100c 15.6 a i dm (3) 3. pulse width limited by safe operating area drain current (pulsed) 100 a p tot (1) total dissipation at t c = 25c 60 w p tot (2) total dissipation at t c = 25c 4 w derating factor 0.03 w/c t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance juncti on-case (drain) (steady state) 2.08 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec thermal resistance junction-ambient 31.3 c/w table 4. avalanche data symbol parameter value unit i av not-repetitive avalanche current (pulse width limited by tj max) 12.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i av , v dd = 12 v) 300 mj
electrical characteristics STL100N1VH5 4/13 doc id 018550 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 12 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating @125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 8 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 0.5 v r ds(on) static drain-source on resistance v gs = 4.5 v, i d = 12.5 a v gs = 2.5 v, i d = 12.5 a 0.0022 0.0032 0.003 0.004 ? ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =10 v, f=1 mhz, v gs =0 - 2085 949 240 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =6 v, i d = 12.5 a v gs =4.5 v figure 14 - 26.5 5.2 4.8 - nc nc nc
STL100N1VH5 electrical characteristics doc id 018550 rev 1 5/13 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =6 v, i d = 12.5 a, r g =4.7 ?, v gs =4.5 v figure 13 - 14.4 31.6 50 16 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current - 25 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 100 a v sd (2) 2. pulsed: pulse duration= 300 s, duty cycle 1.5% forward on voltage i sd = 25 a, v gs =0 - 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 25 a, di/dt = 100 a/s, v dd =10 v, tj=150 c - 49 54 2.2 ns nc a
electrical characteristics STL100N1VH5 6/13 doc id 018550 rev 1 2.1 electrical characterist ics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10m s 100m s 1 s tj=150c tc=25c s ingle p u l s e 0.01 am0 8 174v1 i d 150 100 50 0 0 1 v d s (v) 2 (a) 0.5 1.5 2.5 200 1.5v 2v 2.5v v g s =5v 3 v am0 8 176v1 i d 3 0 20 10 0 0 1 v g s (v) (a) 2 40 50 60 v d s =2.5v am0 8 177v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.96 1.00 1.04 1.0 8 am0 8 17 8 v1 r d s (on) 3 2 1 0 0 10 i d (a) (ohm) 5 15 4 5 6 v g s =4.5v am0 8 179v1
STL100N1VH5 electrical characteristics doc id 018550 rev 1 7/13 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 3 2 1 0 0 5 q g (nc) (v) 20 4 10 15 5 v dd =6v i d =12.5a 25 am0 8 1 8 0v1 c 2000 1500 1000 500 0 4 v d s (v) (pf) 2 2500 6 ci ss co ss cr ss 8 10 3 000 3 500 0 v d s =10v, f=1mhz, v g s =0 am0 8 1 83 v1 v g s (th) 0.6 0.4 0.2 0 -50 0 t j (c) (norm) -25 0. 8 75 25 50 100 1.0 1.2 125 150 am0 8 1 8 4v1 r d s (on) 1.4 1.0 0.6 0.2 -50 0 t j (c) (norm) -25 75 25 50 100 0 1.6 am0 8 1 8 1v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =-50c t j =150c t j =25c am0 8 1 8 2v1
test circuits STL100N1VH5 8/13 doc id 018550 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefo rm figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STL100N1VH5 package mechanical data doc id 018550 rev 1 9/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STL100N1VH5 10/13 doc id 018550 rev 1 figure 19. powerflat 5x6 drawing table 9. powerflat 5x6 mechanical data dim. mm min. typ. max. a 0.80 1.00 a1 0.02 0.05 a2 0.25 b 0.30 0.50 d5.20 e6.15 d2 4.11 4.31 e2 3.50 3.70 e1.27 e1 0.65 l 0.715 1.015 k 1.05 1.35 8 2 3 1 8 17_rev.c bottom view d2 e2 l k e b s ide view a a1 a2 top view e d
STL100N1VH5 package mechanical data doc id 018550 rev 1 11/13 figure 20. recommended footprint footprint 5. 3 5 4.41 1.27 0.60 0. 8 5 1.625 3 . 8 4.275 6. 3 5
revision history STL100N1VH5 12/13 doc id 018550 rev 1 5 revision history table 10. document revision history date revision changes 10-mar-2011 1 first release.
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